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-rw-r--r--include/linux/mtd/mtd.h26
1 files changed, 26 insertions, 0 deletions
diff --git a/include/linux/mtd/mtd.h b/include/linux/mtd/mtd.h
index 8485e42a9b09..9d5306bad117 100644
--- a/include/linux/mtd/mtd.h
+++ b/include/linux/mtd/mtd.h
@@ -110,6 +110,21 @@ struct mtd_oob_ops {
uint8_t *oobbuf;
};
+#define MTD_MAX_OOBFREE_ENTRIES_LARGE 32
+#define MTD_MAX_ECCPOS_ENTRIES_LARGE 448
+/*
+ * Internal ECC layout control structure. For historical reasons, there is a
+ * similar, smaller struct nand_ecclayout_user (in mtd-abi.h) that is retained
+ * for export to user-space via the ECCGETLAYOUT ioctl.
+ * nand_ecclayout should be expandable in the future simply by the above macros.
+ */
+struct nand_ecclayout {
+ __u32 eccbytes;
+ __u32 eccpos[MTD_MAX_ECCPOS_ENTRIES_LARGE];
+ __u32 oobavail;
+ struct nand_oobfree oobfree[MTD_MAX_OOBFREE_ENTRIES_LARGE];
+};
+
struct mtd_info {
u_char type;
uint32_t flags;
@@ -129,6 +144,17 @@ struct mtd_info {
*/
uint32_t writesize;
+ /*
+ * Size of the write buffer used by the MTD. MTD devices having a write
+ * buffer can write multiple writesize chunks at a time. E.g. while
+ * writing 4 * writesize bytes to a device with 2 * writesize bytes
+ * buffer the MTD driver can (but doesn't have to) do 2 writesize
+ * operations, but not 4. Currently, all NANDs have writebufsize
+ * equivalent to writesize (NAND page size). Some NOR flashes do have
+ * writebufsize greater than writesize.
+ */
+ uint32_t writebufsize;
+
uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
uint32_t oobavail; // Available OOB bytes per block